FETKY CoPackaged HEXFET и Шоттки
| Типономинал |
Корпус |
Схема |
Polarity |
Gate Drive |
V(BR)DSS |
Rds(on) - logic level mOhms |
@ Vgs(LL) |
ID @ TA=25C / benchmark |
Rth(JC) |
Мощность рассеяния (W) |
Шоттки Vf |
@ If |
 IRF5803D2 |
SO-8 |
Co-Pack |
P |
LOGIC |
-40 |
112.0 |
-10 |
-3.4 |
62.5 |
2.0 |
0.51 |
5.0 |
| IRF6691 |
DirectFET MT |
Co-Pack |
N |
LOGIC |
20 |
2.5 |
4.5 |
32 |
1.4 |
|
|
|
| IRF7321D2 |
SO-8 |
Co-Pack |
P |
STANDARD |
-30 |
58.0 |
-10 |
-4.9 |
62.5 |
2.0 |
0.57 |
3.0 |
| IRF7322D1 |
SO-8 |
Co-Pack |
P |
LOGIC |
-20 |
58.0 |
-4.5 |
-5.3 |
62.5 |
2.0 |
0.50 |
1.0 |
| IRF7324D1 |
SO-8 |
Co-Pack |
P |
LOGIC |
-20 |
180.0 |
-4.5 |
-2.9 |
62.5 |
2.0 |
0.50 |
1.0 |
| IRF7326D2 |
SO-8 |
Co-Pack |
P |
LOGIC |
-30 |
100.0 |
-10 |
-3.6 |
62.5 |
2.0 |
0.57 |
3.0 |
| IRF7335D1 |
SO-14 |
Dual N Co-Pack |
N |
LOGIC |
30 |
17.5 |
4.5 |
10 |
62.5 |
2.0 |
1.25 |
1.0 |
| IRF7342D2 |
SO-8 |
Co-Pack |
P |
LOGIC |
-55 |
105.0 |
-4.5 |
-3.4 |
62.5 |
2.0 |
0.61 |
3.0 |
| IRF7353D1 |
SO-8 |
Co-Pack |
N |
STANDARD |
30 |
29.0 |
-10 |
6.5 |
62.5 |
2.0 |
0.50 |
1.0 |
| IRF7353D2 |
SO-8 |
Co-Pack |
N |
LOGIC |
30 |
46.0 |
4.5 |
6.5 |
62.5 |
2.0 |
0.57 |
3.0 |
| IRF7421D1 |
SO-8 |
Co-Pack |
N |
STANDARD |
30 |
35.0 |
10 |
5.8 |
62.5 |
2.0 |
0.50 |
1.0 |
| IRF7422D2 |
SO-8 |
Co-Pack |
P |
LOGIC |
-20 |
90.0 |
-4.5 |
-4.3 |
62.5 |
2.0 |
0.57 |
3.0 |
| IRF7521D1 |
Micro 8 |
Co-Pack |
N |
LOGIC |
20 |
135.0 |
4.5 |
2.4 |
100 |
1.25 |
0.50 |
1.0 |
| IRF7523D1 |
Micro 8 |
Co-Pack |
N |
STANDARD |
30 |
135.0 |
10 |
2.4 |
100 |
0.8 |
0.50 |
1.0 |
| IRF7524D1 |
Micro 8 |
Co-Pack |
P |
LOGIC |
-20 |
27.0 |
-4.5 |
-1.7 |
100 |
0.8 |
0.50 |
1.0 |
| IRF7526D1 |
Micro 8 |
Co-Pack |
P |
STANDARD |
-30 |
27.0 |
-10 |
-1.7 |
100 |
0.8 |
0.50 |
1.0 |
| IRF7534D1 |
Micro 8 |
Co-Pack |
P |
3V DRIVE |
-20 |
55.0 |
-4.5 |
-4.3 |
100 |
1.25 |
0.50 |
1.0 |
| IRF7807D1 |
SO-8 |
Co-Pack |
N |
LOGIC |
30 |
25.0 |
4.5 |
8.3 |
50 |
2.5 |
0.50 |
1.0 |
| IRF7807D2 |
SO-8 |
Co-Pack |
N |
LOGIC |
30 |
25.0 |
4.5 |
8.3 |
50 |
2.5 |
0.57 |
3.0 |
| IRF7807VD1 |
SO-8 |
Co-Pack |
N |
LOGIC |
30 |
25.0 |
4.5 |
8.3 |
50 |
2.5 |
0.5 |
1.0 |
| Типономинал |
Корпус |
Схема |
Polarity |
Gate Drive |
V(BR)DSS |
Rds(on) - logic level mOhms |
@ Vgs(LL) |
ID @ TA=25C / benchmark |
Rth(JC) |
Мощность рассеяния (W) |
Шоттки Vf |
@ If |
| IRF7807VD2 |
SO-8 |
Co-Pack |
N |
LOGIC |
30 |
25.0 |
4.5 |
8.3 |
50 |
2.5 |
0.54 |
3.0 |
| IRF7901D1 |
SO-8 |
Dual N Co-Pack |
N |
SYNCHRONOUS BUCK |
30 |
28.0 |
4.5 |
N/A |
25 |
2.0 |
0.5 |
1.0 |
| IRL3103D1 |
TO-220AB |
Co-Pack |
N |
LOGIC |
30 |
14.0 |
10 |
64 |
1.8 |
2 |
0.50 |
1.0 |
| IRL3103D1S |
D2-Pak |
Co-Pack |
N |
STANDARD |
30 |
14.0 |
10 |
54 |
1.8 |
3.1 |
0.50 |
1.0 |
| IRL3103D2 |
TO-220AB |
Co-Pack |
N |
LOGIC |
30 |
14.0 |
10 |
54 |
1.8 |
2.0 |
0.6 |
5.0 |
- Polarity - полярность
- Gate Drive - разновидность схемы управления затвором
- V(BR)DSS (Drain-to-Source Breakdown Voltage) - напряжение пробоя сток-исток
- RDS(on) logic level (Static Drain-to-Source On-Resistance) -максимальное сопротивление по постоянному току во включенном состоянии между стоком и истоком при управлении сигналами логического уровня
- @Vgs (Gate-to-Source Voltage) - нормированное напряжение затвор-исток, при котором происходит открытие канала транзистора
- ID (Continuous Drain Current) - продолжительный ток стока
- Rth(JC) (Maximum Thermal Resistance, Junction to Case) - максимальное температурное сопротивление переход-корпус
- Vf - падение напряжения на интегрированном диоде Шоттки
- @If - нормированный прямой ток через интегрированный диод Шоттки
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