Дискретные P-канальные силовые полевые МОП транзисторы технологии HEXFET® на напряжение -20 : -25 В
| Типономинал |
Корпус |
Схема |
Polarity |
VBRdss (V) |
RDS(on) 2.7V (mohms) |
RDS(on) 4.5V (mohms) |
RDS(on) 10V (mohms) |
ID @ 25C (A) |
Id @ 100C (A) |
QG Typ |
QGD Typ |
Rth(JC) |
Мощность рассеяния (W) |
 IRF5806 |
TSOP-6 (Micro 6) |
DISCRETE |
P |
-20 |
147.0 |
86.0 |
|
-4.0 |
-3.3 |
8.3 |
2.6 |
62.5 |
2.0 |
| IRF6100 |
4-Lead FlipFET |
DISCRETE |
P |
-20 |
95.0 |
65.0 |
|
-4.1 |
-3.3 |
14.0 |
5.0 |
85 |
1.5 |
| IRF7204 |
SO-8 |
DISCRETE |
P |
-20 |
|
100.0 |
60.0 |
-5.3 |
-4.2 |
25.0 |
8.0 |
50 |
2.5 |
| IRF7207 |
SO-8 |
DISCRETE |
P |
-20 |
100.0 |
60.0 |
|
-5.4 |
-4.3 |
15.0 |
5.7 |
50 |
2.5 |
| IRF7404 |
SO-8 |
DISCRETE |
P |
-20 |
60.0 |
40.0 |
|
-6.7 |
-5.4 |
33.3 |
14.0 |
50 |
2.5 |
| IRF7425 |
SO-8 |
DISCRETE |
P |
-20 |
13.0 |
8.2 |
|
-15 |
-12 |
87.0 |
21.0 |
50 |
2.5 |
| IRF7604 |
Micro 8 |
DISCRETE |
P |
-20 |
130.0 |
90.0 |
|
-3.6 |
-2.9 |
13.0 |
5.6 |
70 |
1.8 |
| IRF7663 |
Micro 8 |
DISCRETE |
P |
-20 |
40.0 |
20.0 |
|
-8.2 |
-6.6 |
30.0 |
7.0 |
70 |
1.8 |
| IRF7707 |
TSSOP-8 |
DISCRETE |
P |
-20 |
18.9 |
14.3 |
|
-7.0 |
-5.7 |
31.0 |
10.0 |
83 |
1.5 |
| IRL5602S |
D2-Pak |
DISCRETE |
P |
-20 |
62.0 |
42.0 |
|
24 |
-17 |
29.3 |
12.7 |
2.0 |
75 |
| IRLML6302 |
Micro 3/ SOT-23 |
DISCRETE |
P |
-20 |
900.0 |
600.0 |
|
-0.62 |
-4.8 |
2.4 |
1.0 |
230 |
0.54 |
| IRLML6402 |
Micro 3/ SOT-23 |
DISCRETE |
P |
-20 |
135.0 |
65.0 |
|
-3.7 |
-2.2 |
8.0 |
2.8 |
100 |
1.3 |
| IRLMS6702 |
TSOP-6 (Micro 6) |
DISCRETE |
P |
-20 |
375.0 |
200.0 |
|
-2.3 |
-1.9 |
5.8 |
2.1 |
75 |
1.7 |
| IRLMS6802 |
TSOP-6 (Micro 6) |
DISCRETE |
P |
-20 |
100.0 |
50.0 |
|
-5.6 |
-4.5 |
11.0 |
2.9 |
62.5 |
2.0 |
| SI3443DV |
TSOP-6 (Micro 6) |
DISCRETE |
P |
-20 |
90.0 |
65.0 |
|
-4.4 |
-3.5 |
11.0 |
2.9 |
62.5 |
2.0 |
- Polarity - полярность
- V(BR)DSS (Drain-to-Source Breakdown Voltage) - напряжение пробоя сток-исток
- RDS(on) (Static Drain-to-Source On-Resistance) - сопротивление по постоянному току во включенном состоянии между стоком и истоком
- ID (Continuous Drain Current) - продолжительный ток стока
- QG Typ (Total Gate Charge) - типичный совокупный заряд затвора
- QGD Typ (Gate-to-Drain ("Miller") Charge) - типичный заряд затвор-сток (заряд "Миллера")
- Rth(JC) (Maximum Thermal Resistance, Junction to Case) - максимальное температурное сопротивление переход-корпус
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