Дискретные N-канальные силовые полевые МОП транзисторы технологии HEXFET® на напряжение 100 В

Типономинал	Корпус	Схема	Polarity	VBRdss (V)	RDS(on) 4.5V (mohms)	RDS(on) 10V (mohms)	ID @ 25C (A)	Id @ 100C (A)	QG Typ	QGD Typ	Rth(JC)	Мощность рассеяния (W)
IRC530	TO-220 5-Pin (HEXSense)	DISCRETE	N	100		160.0	14	10	26.0	11.0	1.7	88
IRC540	TO-220 5-Pin (HEXSense)	DISCRETE	N	100		77.0	28	20	69.0	37.0	1.00	150
IRF1310N	TO-220AB	DISCRETE	N	100		36.0	42	30	73.3	38.7	0.95	160
IRF1310NL	TO-262	DISCRETE	N	100		36.0	42	30	73.3	38.7	0.95	160
IRF3710	TO-220AB	DISCRETE	N	100		23.0	57	40	86.7	28.0	0.75	200
IRF3710L	TO-262	DISCRETE	N	100		23.0	57	40	86.7	28.0	0.75	200
IRF3710Z	TO-220AB	DISCRETE	N	100		18.0	59	42	82.0	27.0	0.92	160
IRF3710ZL	TO-262	DISCRETE	N	100		18.0	59	42	82.0	27.0	0.92	160
IRF510	TO-220AB	DISCRETE	N	100		540.0	5.6	4	5.5	2.5	3.5	43
IRF520N	TO-220AB	DISCRETE	N	100		200.0	9.7	6.8	16.7	7.3	3.1	48
IRF520V	TO-220AB	DISCRETE	N	100		165.0	9.6	6.8	14.7	4.7	3.4	44
IRF520VL	TO-262	DISCRETE	N	100		165.0	9.6	6.8	14.7	4.7	3.4	44
IRF530N	TO-220AB	DISCRETE	N	100		90.0	17	12	24.7	4.8	1.9	79
IRF530NL	TO-262	DISCRETE	N	100		90.0	17	12	24.7	4.8	1.9	79
IRF540N	TO-220AB	DISCRETE	N	100		44.0	33	23	47.3	14.0	1.1	140
IRF540NL	TO-262	DISCRETE	N	100		44.0	33	23	47.3	14.0	1.1	140
Типономинал	Корпус	Схема	Polarity	VBRdss (V)	RDS(on) 4.5V (mohms)	RDS(on) 10V (mohms)	ID @ 25C (A)	Id @ 100C (A)	QG Typ	QGD Typ	Rth(JC)	Мощность рассеяния (W)
IRF540Z	TO-220AB	DISCRETE	N	100		26.5	36	25	42.0	15.0	1.64	92
IRF540ZL	TO-262	DISCRETE	N	100		26.5	36	25	42.0	15.0	1.64	92
IRF8010	TO-220AB	DISCRETE	N	100		15.0	80	57	81.0	26.0	0.57	260
IRF8010L	TO-262	DISCRETE	N	100		15.0	80	57	81.0	26.0	0.57	260
IRFB4710	TO-220AB	DISCRETE	N	100		14.0	75	53	110.0	40.0	0.74	200
IRFB59N10D	TO-220AB	DISCRETE	N	100		25.0	59	42	76.0	36.0	0.75	200
IRFD110	HEXDIP	DISCRETE	N	100		540.0	1.0	0.71	5.5	2.5	120	1.3
IRFD120	HEXDIP	DISCRETE	N	100		270.0	1.3	0.94	10.7	5.1	120	1.3
IRFI1310N	TO-220 FullPak (Iso)	DISCRETE	N	100		36.0	22	16	80.0	38.7	3.3	45
IRFI520N	TO-220 FullPak (Iso)	DISCRETE	N	100		200.0	7.2	5.1	16.7	7.3	5.5	27
IRFI540N	TO-220 FullPak (Iso)	DISCRETE	N	100		52.0	18	13	62.7	28.7	3.6	42
IRFP140N	TO-247AC	DISCRETE	N	100		52.0	27	19	62.7	28.7	1.6	94
IRFP150N	TO-247AC	DISCRETE	N	100		36.0	39	28	73.3	38.7	1.1	140
IRFP150V	TO-247AC	DISCRETE	N	100		24.0	46	32	86.7	28.7	1.1	140
IRFP3710	TO-247AC	DISCRETE	N	100		250.0	51	36	66.7	17.3	0.83	180
IRFP4710	TO-247AC	DISCRETE	N	100		14.0	72	51	110.0	40.0	0.81	190
IRFPS3810	Super 247 (TO-274AA)	DISCRETE	N	100		9.0	141	99	260.0	160.0	0.34	441
Типономинал	Корпус	Схема	Polarity	VBRdss (V)	RDS(on) 4.5V (mohms)	RDS(on) 10V (mohms)	ID @ 25C (A)	Id @ 100C (A)	QG Typ	QGD Typ	Rth(JC)	Мощность рассеяния (W)
IRFSL4710	TO-262	DISCRETE	N	100		14.0	75	53	110.0	40.0	0.74	200
IRFSL59N10D	TO-262	DISCRETE	N	100		25.0	59	42	76.0	36.0	0.75	200
IRFU110	I-Pak	DISCRETE	N	100		540.0	4.3	2.7	5.5	2.5	5	25
IRFU120N	I-Pak	DISCRETE	N	100		210.0	9.1	5.8	16.7	7.3	3.2	39
IRFU120Z	I-Pak	DISCRETE	N	100		190.0	8.7	6.1	6.9	3.1	4.28	35
IRFU3410	I-Pak	DISCRETE	N	100		39.0	31	22	37.0	11.0	1.4	110
IRFU3411	I-Pak	DISCRETE	N	100		44.0	32	23	48.0	14.0	1.2	130
IRFU3412	I-Pak	DISCRETE	N	100		25.0	48	34	59.0	17.0	1.05	140
IRFU3710Z	I-Pak	DISCRETE	N	100		18.0	56	39	69.0	25.0	1.05	140
IRFU3910	I-Pak	DISCRETE	N	100		115.0	15	9.5	29.3	14.0	2.4	52
IRFU3911	I-Pak	DISCRETE	N	100		115.0	14	9.5	21.0	6.6	2.7	56
IRL2910	TO-220AB	DISCRETE	N	100		260.0	48	34	93.3	54.0	0.75	200
IRL2910L	TO-262	DISCRETE	N	100		26.0	55	39	93.3	54.0	0.75	190
IRL520N	TO-220AB	DISCRETE	N	100		180.0	10	7.1	13.3	6.7	3.1	48
IRL520NL	TO-262	DISCRETE	N	100		180.0	10	7.1	13.3	6.7	3.1	48
IRL530N	TO-220AB	DISCRETE	N	100	150.0	100.0	17	12	22.7	13.3	1.9	79
IRL530NL	TO-262	DISCRETE	N	100	150.0	100.0	17	12	22.7	13.3	1.9	79
IRL540N	TO-220AB	DISCRETE	N	100	63.0	44.0	36	26	49.3	25.3	1.1	140
IRL540NL	TO-262	DISCRETE	N	100	63.0	44.0	36	26	49.3	25.3	1.1	140
IRLD110	HEXDIP	DISCRETE	N	100	760.0		1	0.7	4.1	2.2	120	1.3
Типономинал	Корпус	Схема	Polarity	VBRdss (V)	RDS(on) 4.5V (mohms)	RDS(on) 10V (mohms)	ID @ 25C (A)	Id @ 100C (A)	QG Typ	QGD Typ	Rth(JC)	Мощность рассеяния (W)
IRLD120	HEXDIP	DISCRETE	N	100	380.0		1.3	0.94	8.0	4.7	120	1.3
IRLI2910	TO-220 FullPak (Iso)	DISCRETE	N	100	40.0	26.0	27	19	93.3	54.0	3.1	48
IRLI520N	TO-220 FullPak (Iso)	DISCRETE	N	100	260.0	180.0	7.7	5.4	13.3	6.7	5.5	27
IRLI530N	TO-220 FullPak (Iso)	DISCRETE	N	100	150.0	100.0	11	7.8	22.7	13.3	4.5	33
IRLI540N	TO-220 FullPak (Iso)	DISCRETE	N	100	63.0	44.0	20	14	49.3	25.3	3.6	42
IRLU120N	I-Pak	DISCRETE	N	100	265.0	185.0	11	6.9	13.3	6.7	3.2	39
IRLU3410	I-Pak	DISCRETE	N	100	155.0	105.0	15	9.5	22.7	13.3	2.4	52

Polarity - полярность

V(BR)DSS (Drain-to-Source Breakdown Voltage) - напряжение пробоя сток-исток

RDS(on) (Static Drain-to-Source On-Resistance) - сопротивление по постоянному току во включенном состоянии между стоком и истоком

ID (Continuous Drain Current) - продолжительный ток стока

QG Typ (Total Gate Charge) - типичный совокупный заряд затвора

QGD Typ (Gate-to-Drain ("Miller") Charge) - типичный заряд затвор-сток (заряд "Миллера")

Rth(JC) (Maximum Thermal Resistance, Junction to Case) - максимальное температурное сопротивление переход-корпус

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