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  1. Hierholzer, M.; Brunner, H.; Laska, T.; Porst, A.: "Characteristics of High Voltage IGBT Modules". PCIM 1995, Nrnberg; Proc. Power Electronics, pp. 135-139
  2. Griessel, R.; Tursky, W.: "The Latest Step in Intelligent Integrated Power". PCIM 1995, Nrnberg; Proc. Power Electronics
  3. Majumdar, G.; Hatae, S.; Fukunaga, M.; Oota, T.; Mori, S.; Thal, E.: "600 V HVIC Incorporated Application. Specific IPMs for Low Power Motor Control", PCIM 1995, Nrnberg; Proc. Power Electronics, pp. 155-161
  4. Hertrich, H., Reinmuth, K.: "HITFET-A New Generation of Intelligent Low Side Switches". PCIM 1995, Nrnberg, Proc. Power Electronics, pp.9-15
  5. Konrad, S.; Anger, K.: Electro-thermal Model for Simulating Chip Temperatures in PWM Inverters" PCIM 1995, Nrnberg, Proc. Power Electronics, pp. 219-228
  6. Szeponik, S., Berger, G., Petzoldt, J., Gens, W.: "Correction of the Current-Depending Voltage Fault in PWM-Inverters with Higher Pulse Frequency by a Control-Automat". PCIM 1995, Nrnberg, Proc. Power Electronics, pp. 289-295
  7. Soule, C.: "Thermal Management of IGBT Power Modules. PCIM 1995, Nrnberg, Proc. Power Electronics, pp.297-312
  8. Lindemann, A.: Investigations on Electromagnetic Compatibility of Power Semiconductor Modules Integrated in a Converter, PCIM 1995, Nrnberg, Proc. Power Electronics, pp.251-262
  9. Ruedi, H.; Khli, P.; u.a.: Dynamic Gate Controller (DGC) A new IGBT Gate Unit for High Current /High Voltage IGBT Modules, PCIM 1995, Nrnberg, Proc. Power Electronics
  10. Konrad, S.: "Thermal Behaviour of Power Modules in PWM-Inverter". EPE 1995, Sevilla, Spanien, Proc. Vol. 1, pp. 565-570
  11. Reimann, T., Petzoldt, J.: "The Dynamic Behaviour of Power Transistors at Impressed di/dt in ZVS Applications", EPE 1995, Sevilla, Spanien, Proc. Vol. 1, pp. 571-576
  12. Hiyoshi, S.; Yanagisawa, S.; u.a.: "A 1000 A 2500 V Pressure Mount RC-IGBT". EPE 1995, Sevilla, Proc. Vol.1, pp. 51-56
  13. Brunner, H.; Hierholzer, M.; Spanke, R.; Laska, T.; Porst, A.: "3300 V IGBT-Module for Traction Application", EPE 1995, Sevilla, Proc. Vol. 1, pp. 56-60
  14. Coquery, G.; Lallemand, R.; Wagner, D.; Gibard, P.: "Reliability of the 400 A IGBT Modules for Traction Converters. Contribution on the Power Thermal Fatigue Influence on Life Expancy. EPE 1995, Sevilla, Proc. Vol. 1, pp. 60-66
  15. Kraus, R.; Reddig, M.; Hoffmann, K.: The Short-Circuit Behaviour of IGBTs Based on Different Technologies, EPE 1995, Sevilla, Proc. Vol. 1, pp. 157-161
  16. Gerstenmaier, Y.C.; Scheller, G.; Hierholzer, M.: "Short Circuit Ruggedness, Switching and Stationary Behaviour of New High Voltage IGBT in Measurement and Simulation". EPE 1995, Sevilla, Proc. Vol.1, pp. 583-588
  17. Blaabjerg, F.; Pedersen, J.K.; Jaeger, U.: A Critical Evaluation of Modern IGBT-Modules EPE 1995, Sevilla, Proc. Vol. 1, pp. 594-601
  18. Aloisi, P.: "Insulated Gate Bipolar Transistor Family", EPE 1995, Sevilla, Proc. Vol. 1, pp. 608-614
  19. Steimel, A.; Teigelktter, J.: A New Test Bench for High Power Turn-off Semiconductor Devices EPE 1995, Sevilla, Proc. Vol. 1, pp. 631-636
  20. Shen, Z. J.; Robb, S. P.; Taomoto, A.: "Current Sensing Characteristics of IGBTs under Short Circuit Conditions, EPE 1995, Sevilla, Proc. Vol.2, pp. 202-207
  21. Eckel, H.-G.; Sack, L.: Optimization of the Short-Circuit Behaviour of NPT-IGBT by the Gate Drive EPE 1995, Sevilla, Proc. Vol. 1, pp. 213-218
  22. Medaule, D.;Majumdar, G.: "Last Improvements of Intelligent Power Modules for Motor Drive" EPE 1995, Sevilla, Proc. Vol.2, pp. 294-301
  23. Fragapane, L.; Letor, R.; Saya, F.: "Optimization of 1000 V Epitaxial IGBT Device for 2 kW Zero Current Resonant Converter", EPE 1995, Sevilla, Proc. Vol. 2, pp. 282-287
  24. Klotz, F., Petzoldt, J.: "Modelling of Conducted EMI", EPE 1995, Sevilla, Spanien, Proc. Vol. 3, pp. 356-361
  25. Constapel, R.; Korec, J,; Baliga, B.J.: "Trench-IGBTs with Integrated Diverter Structures" ISPSD 1995, Yokohama, Proc.; pp. 201-206
  26. Dettmer, H.; Fichtner, W.; Bauer, F.; Stockmeier, T.: "Punch-Through IGBTs with Homogeneous N-Base Operating at 4 kV Line Voltage", ISPSD 1995, Yokohama, Proc.; pp. 492-496
  27. Majumdar, G.; Hatae, S.; Fukunaga, M.; Oota, T.: Application Specific IPM for Low Power-End Motor Drives", ISPSD 1995, Yokohama, Proc.; pp. 207-211
  28. Takahahi, Y.; Yoshikawa, K.; Koga, T.; Soutome, M.; Seki, Y.: "Experimental Investigations of 2.5 kV-l00 A PT-Type and NPT-Type IGBTs", ISPSD 1995, Yokohama, Proc.; pp. 70-74
  29. Tanaka, A.; Mori, M.; Saito, R.; Yamada, K.: "2000 V 500 A High Power Module" ISPSD 1995, Yokohama, Proc.; pp. 80-83
  30. Kudoh, M.; Otsuki, M.; Momota, S.; Yamazaki, T.: "Current Sensing IGBT Structure with Improved Accuracy", ISPSD 1995, Yokohama, Proc.; pp. 119-122
  31. Hotz, R.; Fichtner, W.; Bauer, F.: "On-state and Short Circuit Behaviour of High Voltage Trench Gate IGBTs in Comparison with Planar IGBTs", ISPSD 1995, Yokohama, Proc.; pp. 224-229
  32. Fukumochi, Y., Suga, I., Ono, T.: "Synchronous Rectifiers using New Structure MOSFET" ISPSD 1995, Yokohama, Proc. pp. 252-255
  33. Sunkavalli, R., Baliga, B.J.: "Integral Diodes in Lateral DI Power Devices" ISPSD 1995, Yokohama, Proc. pp. 385-390
  34. Richard, K.W., u.a.: "The Bidirectional Power NMOS-A New Concept in Battery Disconnect Switching" ISPSD 1995, Yokohama, Proc. pp. 480-485
  35. Tornblad, O., u.a.: "Simulations and Measurements of Emitter Properties in 5 kV Si PIN Diodes" ISPSD 1995, Yokohama, Proc. pp. 380-384
  36. Godbold, C.V.; u.a.: A Comparison of Power Module Transistor Stacks PESC 1995, Atlanta, USA, Proc. Vol. I, pp. 3-9
  37. Palmer, P.R.; Githiari, A.N.: The Series Connection of IGBTs with Optimized Voltage Sharing in the Switching Transient, PESC 1995, Atlanta, USA, Proc. Vol. I, pp. 44-49
  38. Li, H.H.; u.a.: Performance Comparison of IGBTs and MCTs in Resonant Converters PESC 1995, Atlanta, USA, Proc. Vol. I, pp. 50-54
  39. Bernet, S., Petzoldt, J.: "AC-Link Converters with MCTs and Reverse Blocking NPT-IGBTs" PESC 1995, Atlanta, USA, Proc. Vol. II, pp. 1258-1264
  40. Klotz, F., Petzoldt, J.: "Modell zur Berechnung leitungsgebundener elektromagnetischer Strungen durch leistungselektronische Schalter", 8.Symposium Maritime Elektronik, Universitt Rostock, 1995, Band Maritime Energie- und Steuerungstechnik, pp. 89-93
  41. Bachofner, A., Feldfo, M., Konrad, S., Laska, Th.: "IGBTs der 2. Generation: Kraftpakete auf kleinstem Raum", SIEMENS Components, 33. Jg. Heft 2/95, pp. 46-48
  42. Klotz, F.: "Vermeidung von berspannungen am Ende langer Motorleitungen" Elektrie, Berlin, Jg. 49, 1995, Heft 5, pp. 54-58
  43. Reimann, T.: "Verhalten abschaltbarer Leistungshalbleiterbauelemente im ZVS-Mode" Dt. Dissertation, TU Ilmenau, 1994, Verlag Shaker, Aachen, 1995, ISBN 3-8265-0538-7
  44. Bernet, S.: "Leistungshalbleiter als Nullstromschalter in Stromrichtern mit weichen Schaltvorgngen" Dt. Dissertation, TU Ilmenau, 1995, Verlag Shaker, Aachen, 1995, ISBN 3-8265-0762-2
  45. Bruckmann, M.; Sigg, J.; Trkes, P.: Reihenschaltung von IGBTs in Experiment und Simulation 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 6
  46. Stockmeier, T.; u.a.: Zuverlssiges Hochleistungs IGBT Modul fr Traktionsanwendungen 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 18
  47. Hofer, P.; Hugel, J.: Ansteuerseitige di/dt- und du/dt-Regelung fr IGBT-Umrichter 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 19
  48. Konrad, S.; Zverev, I.: Treiber- und Schutzkonzepte fr spannungsgesteuerte Leistungshalbleiter 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 20
  49. Reimann, T.; Bernet, S.: "Beanspruchung und Verhalten von IGBTs beim weichen Schalten als Nullstromund Nullspannungsschalter", 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 21
  50. Lutz, J.; Nagengast, P.: Die Controlled Axial Lifetime (CAL)-Diode unter sehr hoher dynamischer Belastung, 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 26
  51. Reinmuth, K.; Lorenz, L.: Protected IGBTs and Modules, PCIM Europe, Jan./Feb. 1995, pp. 20-23
  52. Emerald, P.; Greenland, P.: Power Multi-Chip Modules, PCIM Europe, Sep./Oct. 1995, pp. 242-246
  53. Passerini, B.: Heat Exchangers in Power Modules, PCIM Europe, Sep./Oct. 1995, pp. 248-252
  54. Sperner, A.; Baab, J.: Super Fast Diodes and their Increasing Demand in Industrial Applications PCIM Europe, Nov./Dec. 1995, pp. 308-315
  55. Iida, T; u.a. Trench IGBT for Battery-Operated Vehicles, PCIM Europe, Nov./Dec. 1995, pp. 318-319
  56. Redl, R.: Power Electronics and Electromagnetic Compability, PESC96, Baveno, Proc. Vol. I, pp. 15-21
  57. Busatto, G.; Fioretto, O.; Patti, A.: Non-Destructive Testing of Power MOSFETs Failures during Reverse Recovery of Drain-Source Diode, PESC96, Baveno, Proc. Vol. I, pp. 593-599
  58. Elasser, A.; Torrey, D.A.; u.a.: Switching Losses of IGBTs under Zero-Voltage and Zero-Current Switching, PESC96, Baveno, Proc. Vol. I, pp. 600-607
  59. Reimann, T.; Krmmer, R.; Petzoldt, J.: Comparison of 1200 V/50 A State-of-the-Art Half-Bridge IGBTModules and MCT, PESC96, Baveno, Proc. Vol. I, pp. 620-626
  60. McNeil, N.; Finney, S.J.; Willams, B.W.: Assesment of Off-State Negative Voltage Requirements for IGBTs, PESC96, Baveno, Proc. Vol. I, pp. 627-630
  61. Gerster, Ch.; Hofer, P.; Karrer, N.: Gate-control Strategies for Snubberless Operation of Series Connected IGBTs, PESC96, Baveno, Proc. Vol. II, pp. 1739-1742
  62. Merienne, F.; Roudet, J.; Schanen, J.L.: Switching Disturbance due to Source Inductance for a Power MOSFET: Analysis and Solutions, PESC96, Baveno, Proc. Vol. I, pp. 1743-1747
  63. Brunner, H.; Bruckmann, M.; Hierholzer, M.; Laska, T.; Porst, A.: Improved 3,5 kV IGBT-Diode Chipset and 800 A Module Applications, PESC96, Baveno, Proc. Vol. II, pp. 1748-1753
  64. Palmer, P.R.; Githiari, A.N.; Leedham, R.J.: High Performance Gate Drives for Utilizing the IGBT in the Active Region, PESC96, Baveno, Proc. Vol. I, pp. 1754-1759
  65. Sigg, J.; Bruckmann, M.; Trkes, P.: The Series Connection of IGBTs Investigated by Experiments and Simulation, PESC96, Baveno, Proc. Vol. II, pp. 1760-1765
  66. Mamileti, L.; u.a.: IGBTs Designed for Automative Ignition Systems PESC96, Baveno, Proc. Vol. II, pp. 1907-1912
  67. Zhang, D.; Chen, D.Y.; Lee, F.C.: An Experimental Comparison of Conducted EMI Emissions between a Zero-Voltage Transition Circuit and a Hard Switching Circuit PESC96, Baveno, Proc. Vol. II, pp. 1992-1997
  68. Julian, A.L.; Lipo, T.A.: Elimination of Common Mode Voltage in Three Phase Sinussiodal Power Converters, PESC96, Baveno, Proc. Vol. II, pp. 1768-1972
  69. Klotz, F.; Petzoldt, J.; Vlker, H.: Experimental and Simulative Investigations of Conducted EMI Performance of IGBTs for 5-10 kVA Converters, PESC96, Baveno, Proc. Vol. II, pp. 1986-1991
  70. Hierholzer, M.: Application of High Power IGBT Modules PCIM 1996, Nrnberg, Proc. Power Electronics,
  71. Sassada, Y.; Hideshima, M.; Skinner, A.: A New 1200 V IGBT Generation PCIM 1996, Nrnberg, Proc. Power Electronics, pp. 27-34
  72. Arai, K.; Iwasa, T.; Yu, Y.; Thal, E.: Development of New Concept PKG Third Generation IGBT Module U Series, PCIM 1996, Nrnberg, Proc. Power Electronics, pp. 35-45
  73. Idir, N.; Bausiere, R.: Comparison of MCT and IGBT Devices Operating in ZCS Mode at Constant Frequency, PCIM 1996, Nrnberg, Proc. Power Electronics, pp. 63-68
  74. She, J.-L.; Heumann, K.; Bober, G.: Comparison of Semiconductor Device Losses of the 2nd Generation MCT and IGBT in Hard Switched Inverter Systems PCIM 1996, Nrnberg, Proc. Power Electronics, pp. 69-76
  75. Lindemann, A.: Temperature Stress and Curent Capability of Power Semiconductors in Converters PCIM 1996, Nrnberg, Proc. Power Electronics, pp. 661-670
  76. Bauer, F.; Dettmer, H.; Fichtner, W.; et.al.: Design Considerations and Charcteristics of Rugged Punchthrough (PT) IGBTs with 4.5 kV Blocking Capability, ISPSD 1996, Maui, Proc. pp. 327-330
  77. Burns, D.; Deram, I.; et.al.: NPT-IGBT-Optimizing for Manufacturability ISPSD 1996, Maui, Proc. pp. 331-334
  78. Teigelktter, J.: Schaltverhalten und Schutzbeschaltungen von Hochleistungshalbleitern Dt. Dissertation, Ruhr-Universitt Bochum, 1996, VDI-Verlag, 1996
  79. Benda, V.: Reliability of Power Semiconductor Devices - Problems and Trend PEMC 1996, Budapest, Proc. Vol. I, pp. 30-35
  80. Reimann, T.; Krmmer, R.; Petzoldt, J.: Power Loss Components of 1200 V/50 A State-of-the-Art Half-Bridge IGBT-Modules and MCT, PEMC 1996, Budapest, Proc. Vol. I, pp. 185-189
  81. Amimi, A.; Bouchakour, R.; Maurel, T.: Modeling of Self-Heating and Degradation Effects on the Electrical Behaviour of the IGBT, PEMC 1996, Budapest, Proc. Vol. I, pp. 146-150
  82. Spanik, P.; Dobrucky, B.; Hukel, M.; Paska, R.: A Simulation of Inverse Mode Operation of Power MOSEFET, PEMC 1996, Budapest, Proc. Vol. I, pp. 156-160
  83. Boudreaux, R.; Nelms, R.: A Comparison of MOSFETs, IGBTs and MCTs for Solid State Circuit Breakers, APEC 1996, San Jose, Proc. Vol. I, pp. 227-233
  84. Parthasarathy, V.; Torrey, D.: A Study of the Internal Device Dynamics of Punch-Through and Non-Punch-Through IGBTs under Zero-Current Switchung, APEC 1996, San Jose, Proc. Vol. I, pp. 250-257
  85. Gerster, Ch.; Hofer, P.: Gate-Controlled dv/dt- and di/dt-Limitations in High Power IGBT Converters. EPE Journal, Vol.5, No. 3/4, Jan. 1996, pp. 11-16
  86. Cotorogea, M.; Reimann, T.; Bernet, S.: "The Behaviour of Homogeneous NPT-IGBTs at Hard and Soft Switching", EPE Journal, Vol.5, No. 3/4, Jan. 1996, pp. 23-31
  87. Konrad, S.; Zverev, I.: "Protection Concepts for Rugged IGBT Modules" EPE Journal, Vol.6, No. 3/4, Dez. 1996, pp. 11-19
  88. Eckel, H.-G.; Sack, L.: Optimization of the Short-Circuit Behaviour of NPT-IGBT by the Gate Drive EPE Journal, Vol.6, No. 3/4, Dez. 1996, pp. 20-26
  89. Hanser, Th.: Adaptable Test Equipment for IGBTs, PCIM Europe, May/June 1996, pp. 162-166
  90. Skinner, A.: IGBT Plus for Motor Drive Applications, PCIM Europe, July/Aug. 1996, pp. 274-277
  91. Eschrich, F.: IGBT-Modules Simplify Inverter Design, PCIM Europe, July/Aug. 1996, pp. 284-287
  92. Woodworth, A.; Ambarian, C.:SMD Power Semiconductors for Drives PCIM Europe, Oct. 1996, pp. 322-326
  93. Tursky, W.: Power Modules for Compact Inverters, PCIM Europe, Dec. 1996, pp. 380-384
  94. Noda, S.; u.a.: A Novel Super Compact Intelligent Power Module PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 1-9
  95. Auerbach, F.; Fischer, K.: A New Generation of 1700 V IGBT Modules Optimies Power Consumption of High End Inverters, PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 11-18
  96. Gttert, J.; u.a.: Insulation Voltage Test and Partial Discharge Test of 3,3 kV IGBT-Modules PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 119-122
  97. Duong, S.; u.a.: Investigation on Fuses against IGBT Case Explosion PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 123-132
  98. Enck, R.C.: Aluminium Nitride Solutions in Power Packages and Power Modules PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 133-150
  99. Premkumar, M.K.: Al/SiC for Power Electronics Packaging PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 151-161
  100. Fukuda, M.; u.a.: A Comparison between Thermal Stresses of an Insulated Metal Substrate and an Aluminia DBC, PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 177-184
  101. Ishii, K.; u.a.: A New High Power, High Voltage IGBT PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 185-190
  102. Tanaka, A.; u.a.: 3300 V High Power IGBT Modules with High Reliability for Traction Applications PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 191-199
  103. Hierholzer, M.; u.a.: Improved Characteristics of 3,3 kV IGBT Modules PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 201-204
  104. Hiyoshi, M.; Skinner, A.; u.a.: 3,3 kV and 2,5 kV Press Pack IGBT Switching Performance and Mechanical Reliability, PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 205-215
  105. Guttowski, S.; Jrgensen, H.; Heumann, K.: Influence of the Modulation Method on Conducted Line Emissions of Voltage-Fed Pulsed Inverters, PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 243-249
  106. Lutz, J.: The Freewheeling Diode - No Longer the Weak Component PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 259-265
  107. Mauder, A.; Scholz, W.: Investigation of the Static and Dynamic Current Distribution in Paralleled IGBT Modules, PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 275-284
  108. Nickel, Ch.; Ho, P.; u.a.: An SO-16 Isolated IGBT Gate Driver with Integrated Desaturation Protection and Fault Feedback, PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 285-292
  109. Bober, G.; Arlt, B.; Lokuta, F.: Ultrafast IGBTs Beats MOS in Switching Applications PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 319-325
  110. Eckel, H.G.: Series Connection of IGBTs in Zero Voltage Switching Inverters PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 327-333
  111. Krmmer, R., Konrad, S.; Lorenz, L.: Investigation and Comparison of the Parallel Connection of Discrete PT- and NPT-IGBTs, PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 335-343
  112. Schimanek, E.; Mackert, G.: Semikron SKiiPPACK with New Driver Principle OCP - The Next Step in Intelligent Power Electronics (OCP - Over Current Protection), PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 373-384
  113. Ferber, G.; u.a.: Economy Improvement in Inverter-Converter Module Design PCIM 1997, Nrnberg, Proc. Power Electronics, pp. 455-463
  114. Bhotto, G.; Carpita, M.; u.a.: Series Connected Soft Switched IGBTs for High Power, High Voltage Drives Applications: Experimental Results, PESC 1997, St. Louis, Proc. Vol. I, pp. 3-7
  115. Githiari, A.N.; u.a.: A Comparison of IGBT Models for Use in Circuit Design PESC 1997, St. Louis, Proc. Vol. II, pp. 1554-1560
  116. Strollo, A.G.M.: A new IGBT Circuit Model for SPICE Simulation PESC 1997, St. Louis, Proc. Vol. I, pp. 133-137
  117. Beukes, H.J.; u.a.: Busbar Design Considerations for High Power IGBT Converters PESC 1997, St. Louis, Proc. Vol. II, pp. 847-853
  118. Palmer, P.R.: Some Scaling Issues in the Active Voltage Control of IGBT Modules for High Power Applications, PESC 1997, St. Louis, Proc. Vol. II, pp. 854-860
  119. Zverev, I.; Konrad, S.; Vlker, H.; Petzoldt, J.; Klotz, F.: Influence of the Gate Drive Techniques on the EMI-Behaviour of a Power Converter", PESC'97, St. Louis, Proc. Vol.II, pp. 1522-1528
  120. Guttowski, S.; Heumann, K.; Jrgensen, H.: The Possibilities of Reducing Conducte Line Emissions by Modifying the Basic Parameters of Voltage-Fed Pulsed Inverters PESC'97, St. Louis, Proc. Vol.II, pp. 1535-1540
  121. Julian, A.L. Oriti, G.; Lipo, T.A.: A New Space Vector Modulation Strategy for Common Mode Voltage Reduction, PESC'97, St. Louis, Proc. Vol.II, pp. 1541-1546
  122. Ogasawara, S.; Ayano, H.; Akagi, H.: An Actice Circuit for Cancellation of Common-Mode Voltage Generated by a PWM Inverter, PESC'97, St. Louis, Proc. Vol.II, pp. 1547-1553
  123. Matsuda, H.; Hiyoshi, M.; Kawamura, N.: Pressure Contact Assembly Technology of High Power Devices, ISPSD 1997, Weimar, Proc. pp. 17-24
  124. Palmour, J.W.; Singh, R.; u.a.: Silicon Carbide for Power Devices ISPSD 1997, Weimar, Proc. pp. 25-32
  125. Terashima, T.; Shimizu, K.; Hine, S.: A New Level-Shifting Technique by Devided RESURF Structure ISPSD 1997, Weimar, Proc. pp. 57-60
  126. Igarashi, S.; u.a.: An Active Control Gate Drive Circuit for IGBTs to Realize Low-noise and Snubberless System, ISPSD 1997, Weimar, Proc. pp. 69-72
  127. Omura, I.; Fichtner, W.: Numerical Study of Reverse Blocking Switching Devices in Current Source Inverters in Comparison with Normal Devices in Current Source Inverters and Voltage Source Inverters ISPSD 1997, Weimar, Proc. pp. 93-96
  128. Gerstenmaier, Y.C.; Stoisiek, M.: Switching Behaviour of High Voltage IGBTs and ist Dependence on Gate-Drive, ISPSD 1997, Weimar, Proc. pp. 105-108
  129. Deram, I.; u.a.: Power MOSFET Packaged-Induced On-Resistance Reduction ISPSD 1997, Weimar, Proc. pp. 113-115
  130. Mitlehner, H.; u.a.: The Potential of Fast High Voltage SiC Diodes ISPSD 1997, Weimar, Proc. pp. 165-168
  131. Sakamoto, K.; u.a.: A Fast-Switching Intelligent Power MOSFET with Thermal Protection and Negative Gate Protection, ISPSD 1997, Weimar, Proc. pp. 189-192
  132. Porst, A.; u.a.: Improvement of the Diode Characteristics using Emitter-Controlled Principles (EMCONDiode), ISPSD 1997, Weimar, Proc. pp. 213-216
  133. Brunner, H.; u.a. (Siemens): Progress in Development of the 3,5 kV High Voltage IGBT / Diode Chipset and 1200 A Module Application, ISPSD 1997, Weimar, Proc. pp. 225-228
  134. Mori, M.; u.a. (Hitachi): 3,3 kV Punchthrough IGBT with Low Loss and Fast Switching ISPSD 1997, Weimar, Proc. pp. 229-232
  135. Takahashi, Y.; u.a. (Fuji): Ultra High-Power 2,5 kV-1800 A Power Pack IGBT ISPSD 1997, Weimar, Proc. pp. 233-236
  136. Mochizuki, K.; u.a. (Mitsubishi): Examination of Punch Through IGBT (PT-IGBT) for High Voltage and High Current Application, ISPSD 1997, Weimar, Proc. pp. 237-240
  137. Laska, T.; Matschitsch, M.; Scholz, W.: Ultrathin-Wafer Technology for a New 600 V- NPT-IGBT ISPSD 1997, Weimar, Proc. pp. 361-364
  138. Jaecklin, A.A.: Integration of Power Components - State of the Art and Trends EPE 1997, Trondheim, Proc. Vol. I, pp.1-6
  139. Lorenz, L.: System Integration - A New Milestone for Future Power Electronic Systems EPE 1997, Trondheim, Proc. Vol. I, pp.10-15
  140. Hilpert, G.; Zllig, T.: Integrated Power Module in IGBT Technology for Modular Power Traction Converter, EPE 1997, Trondheim, Proc. Vol. I, pp.106-111
  141. Sommer, K.H.; Spanke, R.; u.a.: Multichip High Power IGBT - Modules for Traction and Industrial Application, EPE 1997, Trondheim, Proc. Vol. I, pp.112-116
  142. Jrgensen , H.; Guttowski, S.; Heumann, K.: Reduction of Conducted Line Emissions in Voltage-Fed Pulsed Inverters by using suppressor capacitors in the Intermediate Circuit EPE 1997, Trondheim, Proc. Vol. I, pp.125-129
  143. Bontemps, S.; Sable, P.; Grafham, D.: Integral Liquid Cooled High Speed Power Module EPE 1997, Trondheim, Proc. Vol. I, pp.200-203
  144. Majumdar, G.; u.a.: Evaluation of Application Specific IPM EPE 1997, Trondheim, Proc. Vol. I, pp.210-215
  145. Hollander, M.; Zetterberg, G.: Evaluation of High Power IGBTs for Traction Application EPE 1997, Trondheim, Proc. Vol. I, pp.412-417
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