Литература

1. Hierholzer, M.; Brunner, H.; Laska, T.; Porst, A.: "Characteristics of High Voltage IGBT Modules". PCIM 1995, Nьrnberg; Proc. Power Electronics, pp. 135-139
2. Griessel, R.; Tursky, W.: "The Latest Step in Intelligent Integrated Power". PCIM 1995, Nьrnberg; Proc. Power Electronics
3. Majumdar, G.; Hatae, S.; Fukunaga, M.; Oota, T.; Mori, S.; Thal, E.: "600 V HVIC Incorporated Application. Specific IPMs for Low Power Motor Control", PCIM 1995, Nьrnberg; Proc. Power Electronics, pp. 155-161
4. Hertrich, H., Reinmuth, K.: "HITFET-A New Generation of Intelligent Low Side Switches". PCIM 1995, Nьrnberg, Proc. Power Electronics, pp.9-15
5. Konrad, S.; Anger, K.: „Electro-thermal Model for Simulating Chip Temperatures in PWM Inverters" PCIM 1995, Nьrnberg, Proc. Power Electronics, pp. 219-228
6. Szeponik, S., Berger, G., Petzoldt, J., Gens, W.: "Correction of the Current-Depending Voltage Fault in PWM-Inverters with Higher Pulse Frequency by a Control-Automat". PCIM 1995, Nьrnberg, Proc. Power Electronics, pp. 289-295
7. Soule, C.: "Thermal Management of IGBT Power Modules“. PCIM 1995, Nьrnberg, Proc. Power Electronics, pp.297-312
8. Lindemann, A.: „Investigations on Electromagnetic Compatibility of Power Semiconductor Modules Integrated in a Converter“, PCIM 1995, Nьrnberg, Proc. Power Electronics, pp.251-262
9. Ruedi, H.; Kцhli, P.; u.a.: „Dynamic Gate Controller (DGC) – A new IGBT Gate Unit for High Current /High Voltage IGBT Modules“, PCIM 1995, Nьrnberg, Proc. Power Electronics
10. Konrad, S.: "Thermal Behaviour of Power Modules in PWM-Inverter". EPE 1995, Sevilla, Spanien, Proc. Vol. 1, pp. 565-570
11. Reimann, T., Petzoldt, J.: "The Dynamic Behaviour of Power Transistors at Impressed di/dt in ZVS Applications", EPE 1995, Sevilla, Spanien, Proc. Vol. 1, pp. 571-576
12. Hiyoshi, S.; Yanagisawa, S.; u.a.: "A 1000 A 2500 V Pressure Mount RC-IGBT". EPE 1995, Sevilla, Proc. Vol.1, pp. 51-56
13. Brunner, H.; Hierholzer, M.; Spanke, R.; Laska, T.; Porst, A.: "3300 V IGBT-Module for Traction Application", EPE 1995, Sevilla, Proc. Vol. 1, pp. 56-60
14. Coquery, G.; Lallemand, R.; Wagner, D.; Gibard, P.: "Reliability of the 400 A IGBT Modules for Traction Converters. Contribution on the Power Thermal Fatigue Influence on Life Expancy“. EPE 1995, Sevilla, Proc. Vol. 1, pp. 60-66
15. Kraus, R.; Reddig, M.; Hoffmann, K.: „The Short-Circuit Behaviour of IGBTs Based on Different Technologies“, EPE 1995, Sevilla, Proc. Vol. 1, pp. 157-161
16. Gerstenmaier, Y.C.; Scheller, G.; Hierholzer, M.: "Short Circuit Ruggedness, Switching and Stationary Behaviour of New High Voltage IGBT in Measurement and Simulation". EPE 1995, Sevilla, Proc. Vol.1, pp. 583-588
17. Blaabjerg, F.; Pedersen, J.K.; Jaeger, U.: „A Critical Evaluation of Modern IGBT-Modules“ EPE 1995, Sevilla, Proc. Vol. 1, pp. 594-601
18. Aloisi, P.: "Insulated Gate Bipolar Transistor Family", EPE 1995, Sevilla, Proc. Vol. 1, pp. 608-614
19. Steimel, A.; Teigelkцtter, J.: „A New Test Bench for High Power Turn-off Semiconductor Devices“ EPE 1995, Sevilla, Proc. Vol. 1, pp. 631-636
20. Shen, Z. J.; Robb, S. P.; Taomoto, A.: "Current Sensing Characteristics of IGBTs under Short Circuit Conditions“, EPE 1995, Sevilla, Proc. Vol.2, pp. 202-207
21. Eckel, H.-G.; Sack, L.: „Optimization of the Short-Circuit Behaviour of NPT-IGBT by the Gate Drive“ EPE 1995, Sevilla, Proc. Vol. 1, pp. 213-218
22. Medaule, D.;Majumdar, G.: "Last Improvements of Intelligent Power Modules for Motor Drive" EPE 1995, Sevilla, Proc. Vol.2, pp. 294-301
23. Fragapane, L.; Letor, R.; Saya, F.: "Optimization of 1000 V Epitaxial IGBT Device for 2 kW Zero Current Resonant Converter", EPE 1995, Sevilla, Proc. Vol. 2, pp. 282-287
24. Klotz, F., Petzoldt, J.: "Modelling of Conducted EMI", EPE 1995, Sevilla, Spanien, Proc. Vol. 3, pp. 356-361
25. Constapel, R.; Korec, J,; Baliga, B.J.: "Trench-IGBTs with Integrated Diverter Structures" ISPSD 1995, Yokohama, Proc.; pp. 201-206
26. Dettmer, H.; Fichtner, W.; Bauer, F.; Stockmeier, T.: "Punch-Through IGBTs with Homogeneous N-Base Operating at 4 kV Line Voltage", ISPSD 1995, Yokohama, Proc.; pp. 492-496
27. Majumdar, G.; Hatae, S.; Fukunaga, M.; Oota, T.: „Application Specific IPM for Low Power-End Motor Drives", ISPSD 1995, Yokohama, Proc.; pp. 207-211
28. Takahahi, Y.; Yoshikawa, K.; Koga, T.; Soutome, M.; Seki, Y.: "Experimental Investigations of 2.5 kV-l00 A PT-Type and NPT-Type IGBTs", ISPSD 1995, Yokohama, Proc.; pp. 70-74
29. Tanaka, A.; Mori, M.; Saito, R.; Yamada, K.: "2000 V 500 A High Power Module" ISPSD 1995, Yokohama, Proc.; pp. 80-83
30. Kudoh, M.; Otsuki, M.; Momota, S.; Yamazaki, T.: "Current Sensing IGBT Structure with Improved Accuracy", ISPSD 1995, Yokohama, Proc.; pp. 119-122
31. Hotz, R.; Fichtner, W.; Bauer, F.: "On-state and Short Circuit Behaviour of High Voltage Trench Gate IGBTs in Comparison with Planar IGBTs", ISPSD 1995, Yokohama, Proc.; pp. 224-229
32. Fukumochi, Y., Suga, I., Ono, T.: "Synchronous Rectifiers using New Structure MOSFET" ISPSD 1995, Yokohama, Proc. pp. 252-255
33. Sunkavalli, R., Baliga, B.J.: "Integral Diodes in Lateral DI Power Devices" ISPSD 1995, Yokohama, Proc. pp. 385-390
34. Richard, K.W., u.a.: "The Bidirectional Power NMOS-A New Concept in Battery Disconnect Switching" ISPSD 1995, Yokohama, Proc. pp. 480-485
35. Tornblad, O., u.a.: "Simulations and Measurements of Emitter Properties in 5 kV Si PIN Diodes" ISPSD 1995, Yokohama, Proc. pp. 380-384
36. Godbold, C.V.; u.a.: „A Comparison of Power Module Transistor Stacks“ PESC 1995, Atlanta, USA, Proc. Vol. I, pp. 3-9
37. Palmer, P.R.; Githiari, A.N.: „The Series Connection of IGBTs with Optimized Voltage Sharing in the Switching Transient“, PESC 1995, Atlanta, USA, Proc. Vol. I, pp. 44-49
38. Li, H.H.; u.a.: „Performance Comparison of IGBTs and MCTs in Resonant Converters“ PESC 1995, Atlanta, USA, Proc. Vol. I, pp. 50-54
39. Bernet, S., Petzoldt, J.: "AC-Link Converters with MCTs and Reverse Blocking NPT-IGBTs" PESC 1995, Atlanta, USA, Proc. Vol. II, pp. 1258-1264
40. Klotz, F., Petzoldt, J.: "Modell zur Berechnung leitungsgebundener elektromagnetischer Stцrungen durch leistungselektronische Schalter", 8.Symposium Maritime Elektronik, Universitдt Rostock, 1995, Band Maritime Energie- und Steuerungstechnik, pp. 89-93
41. Bachofner, A., FeldfoЯ, M., Konrad, S., Laska, Th.: "IGBTs der 2. Generation: Kraftpakete auf kleinstem Raum", SIEMENS Components, 33. Jg. Heft 2/95, pp. 46-48
42. Klotz, F.: "Vermeidung von Ьberspannungen am Ende langer Motorleitungen" Elektrie, Berlin, Jg. 49, 1995, Heft 5, pp. 54-58
43. Reimann, T.: "Verhalten abschaltbarer Leistungshalbleiterbauelemente im ZVS-Mode" Dt. Dissertation, TU Ilmenau, 1994, Verlag Shaker, Aachen, 1995, ISBN 3-8265-0538-7
44. Bernet, S.: "Leistungshalbleiter als Nullstromschalter in Stromrichtern mit weichen Schaltvorgдngen" Dt. Dissertation, TU Ilmenau, 1995, Verlag Shaker, Aachen, 1995, ISBN 3-8265-0762-2
45. Bruckmann, M.; Sigg, J.; Tьrkes, P.: „Reihenschaltung von IGBT’s in Experiment und Simulation“ 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgьte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 6
46. Stockmeier, T.; u.a.: „Zuverlдssiges Hochleistungs IGBT Modul fьr Traktionsanwendungen“ 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgьte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 18
47. Hofer, P.; Hugel, J.: „Ansteuerseitige di/dt- und du/dt-Regelung fьr IGBT-Umrichter“ 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgьte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 19
48. Konrad, S.; Zverev, I.: „Treiber- und Schutzkonzepte fьr spannungsgesteuerte Leistungshalbleiter“ 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgьte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 20
49. Reimann, T.; Bernet, S.: "Beanspruchung und Verhalten von IGBTs beim weichen Schalten als Nullstromund Nullspannungsschalter", 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgьte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 21
50. Lutz, J.; Nagengast, P.: „Die Controlled Axial Lifetime (CAL)-Diode unter sehr hoher dynamischer Belastung“, 24. Kolloquium Halbleiter-Leistungsbauelemente und Materialgьte von Silizium, Freiburg, 1995, Tagungsband, Vortrag 26
51. Reinmuth, K.; Lorenz, L.: „Protected IGBTs and Modules“, PCIM Europe, Jan./Feb. 1995, pp. 20-23
52. Emerald, P.; Greenland, P.: „Power Multi-Chip Modules“, PCIM Europe, Sep./Oct. 1995, pp. 242-246
53. Passerini, B.: „Heat Exchangers in Power Modules“, PCIM Europe, Sep./Oct. 1995, pp. 248-252
54. Sperner, A.; Baab, J.: „Super Fast Diodes and their Increasing Demand in Industrial Applications“ PCIM Europe, Nov./Dec. 1995, pp. 308-315
55. Iida, T; u.a. „Trench IGBT for Battery-Operated Vehicles“, PCIM Europe, Nov./Dec. 1995, pp. 318-319
56. Redl, R.: „Power Electronics and Electromagnetic Compability“, PESC’96, Baveno, Proc. Vol. I, pp. 15-21
57. Busatto, G.; Fioretto, O.; Patti, A.: „Non-Destructive Testing of Power MOSFETs Failures during Reverse Recovery of Drain-Source Diode“, PESC’96, Baveno, Proc. Vol. I, pp. 593-599
58. Elasser, A.; Torrey, D.A.; u.a.: „Switching Losses of IGBTs under Zero-Voltage and Zero-Current Switching“, PESC’96, Baveno, Proc. Vol. I, pp. 600-607
59. Reimann, T.; Krьmmer, R.; Petzoldt, J.: „Comparison of 1200 V/50 A State-of-the-Art Half-Bridge IGBTModules and MCT“, PESC’96, Baveno, Proc. Vol. I, pp. 620-626
60. McNeil, N.; Finney, S.J.; Willams, B.W.: „Assesment of Off-State Negative Voltage Requirements for IGBTs“, PESC’96, Baveno, Proc. Vol. I, pp. 627-630
61. Gerster, Ch.; Hofer, P.; Karrer, N.: “Gate-control Strategies for Snubberless Operation of Series Connected IGBTs”, PESC’96, Baveno, Proc. Vol. II, pp. 1739-1742
62. Merienne, F.; Roudet, J.; Schanen, J.L.: „Switching Disturbance due to Source Inductance for a Power MOSFET: Analysis and Solutions“, PESC’96, Baveno, Proc. Vol. I, pp. 1743-1747
63. Brunner, H.; Bruckmann, M.; Hierholzer, M.; Laska, T.; Porst, A.: “Improved 3,5 kV IGBT-Diode Chipset and 800 A Module Applications”, PESC’96, Baveno, Proc. Vol. II, pp. 1748-1753
64. Palmer, P.R.; Githiari, A.N.; Leedham, R.J.: „High Performance Gate Drives for Utilizing the IGBT in the Active Region“, PESC’96, Baveno, Proc. Vol. I, pp. 1754-1759
65. Sigg, J.; Bruckmann, M.; Tьrkes, P.: “The Series Connection of IGBTs Investigated by Experiments and Simulation”, PESC’96, Baveno, Proc. Vol. II, pp. 1760-1765
66. Mamileti, L.; u.a.: „IGBTs Designed for Automative Ignition Systems“ PESC’96, Baveno, Proc. Vol. II, pp. 1907-1912
67. Zhang, D.; Chen, D.Y.; Lee, F.C.: „An Experimental Comparison of Conducted EMI Emissions between a Zero-Voltage Transition Circuit and a Hard Switching Circuit“ PESC’96, Baveno, Proc. Vol. II, pp. 1992-1997
68. Julian, A.L.; Lipo, T.A.: „Elimination of Common Mode Voltage in Three Phase Sinussiodal Power Converters“, PESC’96, Baveno, Proc. Vol. II, pp. 1768-1972
69. Klotz, F.; Petzoldt, J.; Vцlker, H.: „Experimental and Simulative Investigations of Conducted EMI Performance of IGBTs for 5-10 kVA Converters“, PESC’96, Baveno, Proc. Vol. II, pp. 1986-1991
70. Hierholzer, M.: „Application of High Power IGBT Modules“ PCIM 1996, Nьrnberg, Proc. Power Electronics,
71. Sassada, Y.; Hideshima, M.; Skinner, A.: “A New 1200 V IGBT Generation” PCIM 1996, Nьrnberg, Proc. Power Electronics, pp. 27-34
72. Arai, K.; Iwasa, T.; Yu, Y.; Thal, E.: “Development of New Concept PKG Third Generation IGBT Module U Series”, PCIM 1996, Nьrnberg, Proc. Power Electronics, pp. 35-45
73. Idir, N.; Bausiere, R.: „Comparison of MCT and IGBT Devices Operating in ZCS Mode at Constant Frequency“, PCIM 1996, Nьrnberg, Proc. Power Electronics, pp. 63-68
74. She, J.-L.; Heumann, K.; Bober, G.: „Comparison of Semiconductor Device Losses of the 2nd Generation MCT and IGBT in Hard Switched Inverter Systems“ PCIM 1996, Nьrnberg, Proc. Power Electronics, pp. 69-76
75. Lindemann, A.: „Temperature Stress and Curent Capability of Power Semiconductors in Converters“ PCIM 1996, Nьrnberg, Proc. Power Electronics, pp. 661-670
76. Bauer, F.; Dettmer, H.; Fichtner, W.; et.al.: “Design Considerations and Charcteristics of Rugged Punchthrough (PT) IGBTs with 4.5 kV Blocking Capability”, ISPSD 1996, Maui, Proc. pp. 327-330
77. Burns, D.; Deram, I.; et.al.: “NPT-IGBT-Optimizing for Manufacturability” ISPSD 1996, Maui, Proc. pp. 331-334
78. Teigelkцtter, J.: “Schaltverhalten und Schutzbeschaltungen von Hochleistungshalbleitern” Dt. Dissertation, Ruhr-Universitдt Bochum, 1996, VDI-Verlag, 1996
79. Benda, V.: „Reliability of Power Semiconductor Devices - Problems and Trend“ PEMC 1996, Budapest, Proc. Vol. I, pp. 30-35
80. Reimann, T.; Krьmmer, R.; Petzoldt, J.: „Power Loss Components of 1200 V/50 A State-of-the-Art Half-Bridge IGBT-Modules and MCT“, PEMC 1996, Budapest, Proc. Vol. I, pp. 185-189
81. Amimi, A.; Bouchakour, R.; Maurel, T.: „Modeling of Self-Heating and Degradation Effects on the Electrical Behaviour of the IGBT“, PEMC 1996, Budapest, Proc. Vol. I, pp. 146-150
82. Spanik, P.; Dobrucky, B.; Hukel, M.; Paska, R.: „A Simulation of Inverse Mode Operation of Power MOSEFET“, PEMC 1996, Budapest, Proc. Vol. I, pp. 156-160
83. Boudreaux, R.; Nelms, R.: „A Comparison of MOSFETs, IGBTs and MCTs for Solid State Circuit Breakers“, APEC 1996, San Jose, Proc. Vol. I, pp. 227-233
84. Parthasarathy, V.; Torrey, D.: „A Study of the Internal Device Dynamics of Punch-Through and Non-Punch-Through IGBTs under Zero-Current Switchuнng“, APEC 1996, San Jose, Proc. Vol. I, pp. 250-257
85. Gerster, Ch.; Hofer, P.: Gate-Controlled dv/dt- and di/dt-Limitations in High Power IGBT Converters“. EPE Journal, Vol.5, No. 3/4, Jan. 1996, pp. 11-16
86. Cotorogea, M.; Reimann, T.; Bernet, S.: "The Behaviour of Homogeneous NPT-IGBTs at Hard and Soft Switching", EPE Journal, Vol.5, No. 3/4, Jan. 1996, pp. 23-31
87. Konrad, S.; Zverev, I.: "Protection Concepts for Rugged IGBT Modules" EPE Journal, Vol.6, No. 3/4, Dez. 1996, pp. 11-19
88. Eckel, H.-G.; Sack, L.: „Optimization of the Short-Circuit Behaviour of NPT-IGBT by the Gate Drive“ EPE Journal, Vol.6, No. 3/4, Dez. 1996, pp. 20-26
89. Hanser, Th.: „Adaptable Test Equipment for IGBTs“, PCIM Europe, May/June 1996, pp. 162-166
90. Skinner, A.: „IGBT Plus for Motor Drive Applications“, PCIM Europe, July/Aug. 1996, pp. 274-277
91. Eschrich, F.: „IGBT-Modules Simplify Inverter Design“, PCIM Europe, July/Aug. 1996, pp. 284-287
92. Woodworth, A.; Ambarian, C.:„SMD Power Semiconductors for Drives“ PCIM Europe, Oct. 1996, pp. 322-326
93. Tursky, W.: „Power Modules for Compact Inverters“, PCIM Europe, Dec. 1996, pp. 380-384
94. Noda, S.; u.a.: „A Novel Super Compact Intelligent Power Module“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 1-9
95. Auerbach, F.; Fischer, K.: „A New Generation of 1700 V IGBT Modules Optimies Power Consumption of High End Inverters“, PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 11-18
96. Gцttert, J.; u.a.: „Insulation Voltage Test and Partial Discharge Test of 3,3 kV IGBT-Modules“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 119-122
97. Duong, S.; u.a.: „Investigation on Fuses against IGBT Case Explosion“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 123-132
98. Enck, R.C.: „Aluminium Nitride Solutions in Power Packages and Power Modules“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 133-150
99. Premkumar, M.K.: „Al/SiC for Power Electronics Packaging“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 151-161
100. Fukuda, M.; u.a.: „A Comparison between Thermal Stresses of an Insulated Metal Substrate and an Aluminia DBC“, PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 177-184
101. Ishii, K.; u.a.: „A New High Power, High Voltage IGBT“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 185-190
102. Tanaka, A.; u.a.: „3300 V High Power IGBT Modules with High Reliability for Traction Applications“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 191-199
103. Hierholzer, M.; u.a.: „Improved Characteristics of 3,3 kV IGBT Modules“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 201-204
104. Hiyoshi, M.; Skinner, A.; u.a.: „3,3 kV and 2,5 kV Press Pack IGBT Switching Performance and Mechanical Reliability“, PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 205-215
105. Guttowski, S.; Jцrgensen, H.; Heumann, K.: „Influence of the Modulation Method on Conducted Line Emissions of Voltage-Fed Pulsed Inverters“, PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 243-249
106. Lutz, J.: „The Freewheeling Diode - No Longer the Weak Component“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 259-265
107. Mauder, A.; Scholz, W.: „Investigation of the Static and Dynamic Current Distribution in Paralleled IGBT Modules“, PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 275-284
108. Nickel, Ch.; Ho, P.; u.a.: „An SO-16 Isolated IGBT Gate Driver with Integrated Desaturation Protection and Fault Feedback“, PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 285-292
109. Bober, G.; Arlt, B.; Lokuta, F.: „Ultrafast IGBTs Beats MOS in Switching Applications“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 319-325
110. Eckel, H.G.: „Series Connection of IGBTs in Zero Voltage Switching Inverters“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 327-333
111. Krьmmer, R., Konrad, S.; Lorenz, L.: „Investigation and Comparison of the Parallel Connection of Discrete PT- and NPT-IGBTs“, PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 335-343
112. Schimanek, E.; Mackert, G.: „Semikron SKiiPPACK with New Driver Principle „OCP“ - The Next Step in Intelligent Power Electronics (OCP - Over Current Protection)“, PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 373-384
113. Ferber, G.; u.a.: „Economy Improvement in Inverter-Converter Module Design“ PCIM 1997, Nьrnberg, Proc. Power Electronics, pp. 455-463
114. Bhotto, G.; Carpita, M.; u.a.: „Series Connected Soft Switched IGBTs for High Power, High Voltage Drives Applications: Experimental Results“, PESC 1997, St. Louis, Proc. Vol. I, pp. 3-7
115. Githiari, A.N.; u.a.: „A Comparison of IGBT Models for Use in Circuit Design“ PESC 1997, St. Louis, Proc. Vol. II, pp. 1554-1560
116. Strollo, A.G.M.: „A new IGBT Circuit Model for SPICE Simulation“ PESC 1997, St. Louis, Proc. Vol. I, pp. 133-137
117. Beukes, H.J.; u.a.: „Busbar Design Considerations for High Power IGBT Converters“ PESC 1997, St. Louis, Proc. Vol. II, pp. 847-853
118. Palmer, P.R.: „Some Scaling Issues in the Active Voltage Control of IGBT Modules for High Power Applications“, PESC 1997, St. Louis, Proc. Vol. II, pp. 854-860
119. Zverev, I.; Konrad, S.; Vцlker, H.; Petzoldt, J.; Klotz, F.: „Influence of the Gate Drive Techniques on the EMI-Behaviour of a Power Converter", PESC'97, St. Louis, Proc. Vol.II, pp. 1522-1528
120. Guttowski, S.; Heumann, K.; Jцrgensen, H.: „The Possibilities of Reducing Conducte Line Emissions by Modifying the Basic Parameters of Voltage-Fed Pulsed Inverters“ PESC'97, St. Louis, Proc. Vol.II, pp. 1535-1540
121. Julian, A.L. Oriti, G.; Lipo, T.A.: „A New Space Vector Modulation Strategy for Common Mode Voltage Reduction“, PESC'97, St. Louis, Proc. Vol.II, pp. 1541-1546
122. Ogasawara, S.; Ayano, H.; Akagi, H.: „An Actice Circuit for Cancellation of Common-Mode Voltage Generated by a PWM Inverter“, PESC'97, St. Louis, Proc. Vol.II, pp. 1547-1553
123. Matsuda, H.; Hiyoshi, M.; Kawamura, N.: „Pressure Contact Assembly Technology of High Power Devices“, ISPSD 1997, Weimar, Proc. pp. 17-24
124. Palmour, J.W.; Singh, R.; u.a.: „Silicon Carbide for Power Devices“ ISPSD 1997, Weimar, Proc. pp. 25-32
125. Terashima, T.; Shimizu, K.; Hine, S.: „A New Level-Shifting Technique by Devided RESURF Structure“ ISPSD 1997, Weimar, Proc. pp. 57-60
126. Igarashi, S.; u.a.: „An Active Control Gate Drive Circuit for IGBTs to Realize Low-noise and Snubberless System“, ISPSD 1997, Weimar, Proc. pp. 69-72
127. Omura, I.; Fichtner, W.: „Numerical Study of Reverse Blocking Switching Devices in Current Source Inverters in Comparison with Normal Devices in Current Source Inverters and Voltage Source Inverters“ ISPSD 1997, Weimar, Proc. pp. 93-96
128. Gerstenmaier, Y.C.; Stoisiek, M.: „Switching Behaviour of High Voltage IGBTs and ist Dependence on Gate-Drive“, ISPSD 1997, Weimar, Proc. pp. 105-108
129. Deram, I.; u.a.: „Power MOSFET Packaged-Induced On-Resistance Reduction“ ISPSD 1997, Weimar, Proc. pp. 113-115
130. Mitlehner, H.; u.a.: „The Potential of Fast High Voltage SiC Diodes“ ISPSD 1997, Weimar, Proc. pp. 165-168
131. Sakamoto, K.; u.a.: „A Fast-Switching Intelligent Power MOSFET with Thermal Protection and Negative Gate Protection“, ISPSD 1997, Weimar, Proc. pp. 189-192
132. Porst, A.; u.a.: „Improvement of the Diode Characteristics using Emitter-Controlled Principles (EMCONDiode)“, ISPSD 1997, Weimar, Proc. pp. 213-216
133. Brunner, H.; u.a. (Siemens): „Progress in Development of the 3,5 kV High Voltage IGBT / Diode Chipset and 1200 A Module Application“, ISPSD 1997, Weimar, Proc. pp. 225-228
134. Mori, M.; u.a. (Hitachi): „3,3 kV Punchthrough IGBT with Low Loss and Fast Switching“ ISPSD 1997, Weimar, Proc. pp. 229-232
135. Takahashi, Y.; u.a. (Fuji): „Ultra High-Power 2,5 kV-1800 A Power Pack IGBT“ ISPSD 1997, Weimar, Proc. pp. 233-236
136. Mochizuki, K.; u.a. (Mitsubishi): „Examination of Punch Through IGBT (PT-IGBT) for High Voltage and High Current Application“, ISPSD 1997, Weimar, Proc. pp. 237-240
137. Laska, T.; Matschitsch, M.; Scholz, W.: „Ultrathin-Wafer Technology for a New 600 V- NPT-IGBT“ ISPSD 1997, Weimar, Proc. pp. 361-364
138. Jaecklin, A.A.: „Integration of Power Components - State of the Art and Trends“ EPE 1997, Trondheim, Proc. Vol. I, pp.1-6
139. Lorenz, L.: „System Integration - A New Milestone for Future Power Electronic Systems“ EPE 1997, Trondheim, Proc. Vol. I, pp.10-15
140. Hilpert, G.; Zьllig, T.: „Integrated Power Module in IGBT Technology for Modular Power Traction Converter“, EPE 1997, Trondheim, Proc. Vol. I, pp.106-111
141. Sommer, K.H.; Spanke, R.; u.a.: „Multichip High Power IGBT - Modules for Traction and Industrial Application“, EPE 1997, Trondheim, Proc. Vol. I, pp.112-116
142. Jцrgensen , H.; Guttowski, S.; Heumann, K.: „Reduction of Conducted Line Emissions in Voltage-Fed Pulsed Inverters by using suppressor capacitors in the Intermediate Circuit“ EPE 1997, Trondheim, Proc. Vol. I, pp.125-129
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